BETAVOLTAIC BATTERY AND METHOD FOR MANUFACTURING BETAVOLTAIC BATTERY

• Main Authors: KIM, Dong Seok, YOON, Young Jun, LEE, Jae Sang
• Format: Patent
• Language: English; French; Korean
• Published: 30.12.2021
• Subjects: APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOTOTHERWISE PROVIDED FOR; NUCLEAR ENGINEERING; NUCLEAR PHYSICS; OBTAINING ENERGY FROM RADIOACTIVE SOURCES; PHYSICS; UTILISING COSMIC RADIATION

The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit. La présente invention concerne une batterie bêtavoltaïque comprenant : un substrat ; une unité semi-conductrice intrinsèque disposée sur le substrat ; une unité semi-conductrice de type N et une unité semi-conductrice de type P disposées sur au moins une partie d'une surface de l'unité semi-conductrice intrinsèque et agencées en alternance ; et des sources de rayons bêta disposées sur l'unité semi-conductrice de type N et sur l'unité semi-conductrice de type P. La présente invention concerne également un procédé de fabrication d'une batterie bêtavoltaïque. Le procédé comprend les étapes consistant à : (A) former une unité semi-conductrice intrinsèque sur un substrat ; (B) former une unité semi-conductrice de type N et une unité semi-conductrice de type P en alternance en exposant au moins une partie de la surface de l'unité semi-conductrice intrinsèque à un faisceau d'ions ; et (C) disposer une source de rayons bêta sur l'unité semi-conductrice de type N et sur l'unité semi-conductrice de type P. 본 발명은 기판; 상기 기판 상에 배치된 진성 반도체부; 상기 진성 반도체부의 표면의 적어도 일부의 영역에 배치되며, 교번하여 배열되는 n형 반도체부 및 p형 반도체부; 및 상기 n형 반도체부와 p형 반도체부 상에 배치된 베타선원;을 포함하는 것인, 베타전지 및 (A) 기판 상에 진성 반도체부를 형성하는 단계; (B) 상기 진성 반도체부의 표면의 적어도 일부에 이온빔을 조사하여서 교번하여 배열되는 n형 반도체부 및 p형 반도체부를 형성하는 단계; 및 (C) 상기 n형 반도체부 및 p형 반도체부 상에 베타선원을 배치하는 단계;를 포함하는 것인, 베타전지의 제조 방법에 관한 것이다.