FILM FORMING METHOD AND FILM FORMING APPARATUS

• Main Authors: IFUKU, Ryota, MATSUMOTO, Takashi
• Format: Patent
• Language: English; French; Japanese
• Published: 30.12.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

This film forming method comprises: a first step wherein a first aromatic hydrocarbon gas having a first functional group is supplied to a substrate that has been provided with an undercoat film; and a second step wherein the first aromatic hydrocarbon gas adsorbed on the surface of the undercoat film is activated by means of a plasma of a first reaction gas that contains at least a rare gas. L'invention concerne un procédé de formation de film comprenant : une première étape dans laquelle un premier gaz hydrocarboné aromatique présentant un premier groupe fonctionnel est fourni à un substrat qui a été pourvu d'un film de sous-couche ; et une deuxième étape dans laquelle le premier gaz hydrocarboné aromatique adsorbé sur la surface du film de sous-couche est activé au moyen d'un plasma d'un premier gaz de réaction qui contient au moins un gaz rare. 成膜方法は、下地膜が形成された基板に第１官能基を有する第１芳香族炭化水素ガスを供給する第１工程と、少なくとも希ガスを含む第１反応ガスのプラズマにより、下地膜の表面上に吸着した第１芳香族炭化水素ガスを活性化させる第２工程とを含む。