STRAINED QUANTUM WELL STRUCTURE, OPTICAL SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR LASER

• Main Authors: MITSUHARA, Manabu, SATO, Tomonari
• Format: Patent
• Language: English; French; Japanese
• Published: 02.12.2021
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

This strained quantum well structure (30) is a type I strained quantum well structure in which InP crystal is grown as a substrate, and the light emission wavelength is 1.9-2.5 µm (inclusive), wherein a well layer (31) is an InGaAs, InAs, or InGaAsSb crystal having compressive strain, a barrier laye...