HYBRID-IMAGING DETECTOR STRUCTURE

Disclosed in the present invention is a hybrid-imaging detector structure, comprising: a visible light sensor and an infrared sensor which are vertically stacked. Light is first incident to the visible light sensor, and then incident to the infrared sensor after absorption and filtering; the visible...

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Bibliographic Details
Main Authors ZHONG, Xiaolan, KANG, Xiaoxu
Format Patent
LanguageChinese
English
French
Published 25.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:Disclosed in the present invention is a hybrid-imaging detector structure, comprising: a visible light sensor and an infrared sensor which are vertically stacked. Light is first incident to the visible light sensor, and then incident to the infrared sensor after absorption and filtering; the visible light sensor forms a cover structure to vacuum-seal the infrared sensor on a substrate of a single chip. According to the present invention, a conventional CMOS-MEMS microbridge resonator structure is used for mid- and far-infrared detection, and a cover having a pn junction or a metal semiconductor contact barrier device is used for implementing vacuum packaging and visible light detection, thereby implementing image fusion, by a single chip, of low-cost, high-quality, and phase-free visible light and mid- and far-infrared images. La présente invention divulgue une structure de détecteur d'imagerie hybride, comprenant : un capteur de lumière visible et un capteur infrarouge, empilés verticalement. La lumière est
Bibliography:Application Number: WO2021CN94314