SEMICONDUCTOR DEVICE AND METHOD FOR SEMICONDUCTOR DEVICE FABRICATION
Provided is a high-yield method for semiconductor device fabrication. When forming a film of a gate insulator or an insulator in contact with an oxide semiconductor such as an interlayer film in a semiconductor device having the oxide semiconductor on a substrate, the insulator film can be formed wi...
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Main Authors | , , |
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Format | Patent |
Language | English French Japanese |
Published |
30.09.2021
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Subjects | |
Online Access | Get full text |
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