SEMICONDUCTOR DEVICE AND METHOD FOR SEMICONDUCTOR DEVICE FABRICATION

Provided is a high-yield method for semiconductor device fabrication. When forming a film of a gate insulator or an insulator in contact with an oxide semiconductor such as an interlayer film in a semiconductor device having the oxide semiconductor on a substrate, the insulator film can be formed wi...

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Bibliographic Details
Main Authors YANAGISAWA, Yuichi, IIKUBO, Yoichi, YAMAGUCHI, Daisuke
Format Patent
LanguageEnglish
French
Japanese
Published 30.09.2021
Subjects
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