APPARATUS AND METHOD FOR GROWING SILICON SINGLE CRYSTAL INGOT

• Main Authors: AN, Yun Ha, KOO, Ja Seok, KIM, Do Yeon, WANG, Hak Eui
• Format: Patent
• Language: English; French; Korean
• Published: 15.07.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

An embodiment provides an apparatus for growing a silicon single crystal ingot, comprising: a chamber; a crucible which is provided inside the chamber and accommodates a silicon melt; a heating part which is provided inside the chamber and disposed around the crucible; a first water cooling pipe which is fixed and is provided at an upper portion of the inside of the chamber, and is disposed around an ingot that is grown and pulled from the crucible; a heat shield which is provided on an upper portion of the crucible; and a second water cooling pipe which is movable and is provided in an outer area of the first water cooling pipe. Un mode de réalisation concerne un appareil de croissance d'un lingot de silicium monocristallin, comprenant : une chambre ; un creuset qui est disposé à l'intérieur de la chambre et reçoit un bain fondu de silicium ; une partie de chauffage qui est disposée à l'intérieur de la chambre et autour du creuset ; un premier tuyau de refroidissement par l'eau qui est fixe et qui est disposé au niveau d'une partie supérieure de l'intérieur de la chambre, et qui est disposé autour d'un lingot qui est amené à croître et tiré à partir du creuset ; un écran thermique qui est disposé sur une partie supérieure du creuset ; et un second tuyau de refroidissement par l'eau qui est mobile et qui est disposé dans une zone externe du premier tuyau de refroidissement par l'eau. 실시예는 챔버; 상기 챔버의 내부에 구비되고, 실리콘 용융액이 수용되는 도가니; 상기 챔버의 내부에 구비되고, 상기 도가니의 둘레에 배치되는 가열부; 상기 챔버 내부의 상부에 고정되어 구비되고, 상기 도가니로부터 성장되어 인상되는 잉곳의 둘레에 배치되는 제1 수냉관; 상기 도가니의 상부에 구비되는 열차폐체; 및 상기 제1 수냉관의 바깥 영역에 구비되는 이동식의 제2 수냉관을 포함하는 실리콘 단결정 잉곳의 성장 장치를 제공한다.