GROUP III NITRIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME

• Main Author: NAGASHIMA, Toru
• Format: Patent
• Language: English; French; Japanese
• Published: 01.07.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A group III nitride single-crystal substrate having a first main surface and a rear surface on the reverse side thereof from the first main surface, wherein the absolute value of the curvature radius of the first main surface of the substrate is 10 m or greater, the absolute value of the curvature radius of a crystal lattice plane in the center of the first main surface of the substrate is 10 m or greater, and the 1/1000 intensity width of the X-ray rocking curve of a low-angle incident surface in the center of the first main surface of the substrate is 1200 seconds or less. La présente invention concerne un substrat monocristallin de nitrure du groupe III ayant une première surface principale et une surface arrière sur le côté inverse de celui-ci par rapport à la première surface principale, la valeur absolue du rayon de courbure de la première surface principale du substrat étant supérieure ou égale à 10 m, la valeur absolue du rayon de courbure d'un plan de réseau cristallin au centre de la première surface principale du substrat étant supérieure ou égale à 10 m, et la largeur au 1/1000ème d'intensité de la courbe d'oscillation des rayons X d'une surface d'incidence à faible angle au centre de la première surface principale du substrat étant inférieure ou égale à 1 200 secondes. 第１の主面、及び、該第１の主面と反対側の第１の裏面を有するＩＩＩ族窒化物単結晶基板であって、基板の第１の主面の曲率半径の絶対値が１０ｍ以上であり、基板の第１の主面の中心における結晶格子面の曲率半径の絶対値が１０ｍ以上であり、基板の第１の主面の中心における低角入射面のＸ線ロッキングカーブの１／１０００強度幅が１２００秒以下である、ＩＩＩ族窒化物単結晶基板。