ETCHING METHOD AND ETCHING APPARATUS

• Main Authors: HAYASHI Haruna, TODA Satoshi, TACHIBANA Mitsuhiro, SHINDO Naoki, YOU Gen
• Format: Patent
• Language: English; French; Japanese
• Published: 17.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

An etching method according to the present invention comprises: a step for arranging a substrate within a chamber, said substrate having at least a silicon-containing material and a molybdenum film or a tungsten film in such a manner that the molybdenum film or the tungsten film is exposed therefrom; and a step for selectively etching the molybdenum film or the tungsten film with respect to the silicon-containing material by supplying an oxidation gas and a hexafluoride gas, which serves as an etching gas, into the chamber. Un procédé de gravure, selon la présente invention, comprend : une étape consistant à agencer un substrat à l'intérieur d'une chambre, ledit substrat ayant au moins un matériau contenant du silicium et un film de molybdène ou un film de tungstène de sorte que le film de molybdène ou le film de tungstène soit exposé ; et une étape consistant à graver sélectivement le film de molybdène ou le film de tungstène par rapport au matériau contenant du silicium par fourniture d'un gaz d'oxydation et d'un gaz d'hexafluorure, faisant office de gaz de gravure, dans la chambre. エッチング方法は、少なくともモリブデン膜またはタングステン膜とシリコン含有物とを有し、モリブデン膜またはタングステン膜が露出した状態の基板をチャンバー内に設ける工程と、チャンバー内に、酸化ガスと、エッチングガスとしての六フッ化物ガスとを供給してモリブデン膜またはタングステン膜をシリコン含有物に対して選択的にエッチングする工程とを有する。