RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD

• Main Authors: YAMAMOTO Kei, KAMIMURA Sou, FUKUHARA Toshiaki, KAWABATA Takeshi
• Format: Patent
• Language: English; French; Japanese
• Published: 03.06.2021
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

The present invention provides: a resist underlayer film-forming composition that contains a polysiloxane, an acid generating agent, and a specific compound, the contained amount of said specific compound being 0.1-400 mass ppm with respect to the total mass of the resist underlayer film-forming composition; a pattern forming method using said resist underlayer film-forming composition; and an electronic device manufacturing method. La présente invention concerne: une composition de formation de film de sous-couche de réserve qui contient un polysiloxane, un agent générateur d'acide et un composé spécifique, la teneur en composé spécifique étant de 0,1 à 400 ppm en masse par rapport à la masse totale de la composition de formation de film de sous-couche de réserve; un procédé de formation de motif utilisant ladite composition de formation de film de sous-couche de réserve ; et un procédé de fabrication de dispositif électronique. 本発明は、ポリシロキサン、酸発生剤、及び、特定の化合物を含有するレジスト下層膜形成用組成物であって、上記特定の化合物の含有量が、前記レジスト下層膜形成用組成物の全質量に対して、０．１質量ｐｐｍ以上４００質量ｐｐｍ以下である、レジスト下層膜形成用組成物、このレジスト下層膜形成用組成物を用いるパターン形成方法、及び電子デバイスの製造方法を提供する。