PLASMA PROCESSING DEVICE AND TOP WALL

• Main Authors: EMORI, Soudai, IMANAKA, Masashi, KAMATA, Eiki, IKEDA, Taro, ITOH, Satoshi, OZAKI, Shigenori
• Format: Patent
• Language: English; French; Japanese
• Published: 15.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided is a plasma processing device that converts into plasma a gas supplied to the interior of a processing container and processes a substrate, the device including: microwave introduction windows, which are disposed at a plurality of openings provided in a top wall of the processing container and which supply microwave power to the interior of the processing container; and grooves that are formed in the top wall so as to surround the openings. The width between the grooves and the openings is not uniform in relation to the circumferential direction of the openings. L'invention concerne un dispositif de traitement au plasma qui convertit en plasma un gaz acehminé à l'intérieur d'un récipient de traitement et traite un substrat, le dispositif comprenant : des fenêtres d'introduction de micro-ondes, qui sont agencées au niveau d'une pluralité d'ouvertures disposées dans une paroi supérieure du récipient de traitement et qui fournissent de l'énergie micro-onde à l'intérieur du récipient de traitement ; et des rainures qui sont formées dans la paroi supérieure de façon à entourer les ouvertures. La largeur entre les rainures et les ouvertures n'est pas uniforme par rapport à la direction circonférentielle des ouvertures. 処理容器内に供給されたガスをプラズマ化して基板を処理するプラズマ処理装置であって、前記処理容器の天壁に複数設けられた開口に配置され、マイクロ波のパワーを前記処理容器内に供給するマイクロ波導入窓と、前記開口を囲むように前記天壁に形成された溝と、を有し、前記溝と前記開口との間の幅が、前記開口の周方向に対して均一でない、プラズマ処理装置が提供される。