METHOD FOR MANUFACTURING QUANTUM DOT AND QUANTUM DOT MANUFACTURED THEREBY

The present invention relates to a method for manufacturing a quantum dot and a quantum dot manufactured thereby. The method for manufacturing a quantum dot comprises the steps of: (S100) heating a first solution containing a first zinc precursor, a first carboxylic acid-based compound, and a first...

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Main Authors NOH, Jaehong, GIL, Kyeonghun, HA, Sungmin, KIM, Kyungnam, KANG, Hyunjin, NAM, Chunrae
Format Patent
LanguageEnglish
French
Korean
Published 25.03.2021
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Summary:The present invention relates to a method for manufacturing a quantum dot and a quantum dot manufactured thereby. The method for manufacturing a quantum dot comprises the steps of: (S100) heating a first solution containing a first zinc precursor, a first carboxylic acid-based compound, and a first organic solvent; (S200) feeding a first selenium precursor to a second organic solvent to prepare a second solution; (S300) feeding the second solution to the heated first solution to form a ZnSe core; and (S400) forming at least one layered shell on the ZnSe core, wherein the polarity index difference between the second organic solvent and the first organic solvent falls in a range of 0 to 0.4. La présente invention concerne un procédé de fabrication d'un point quantique et un point quantique fabriqué au moyen de ce dernier. Le procédé de fabrication d'un point quantique comprend les étapes consistant à : (S100) chauffer une première solution contenant un premier précurseur de zinc, un premier composé à base d'acide carboxylique, et un premier solvant organique ; (S200) introduire un premier précurseur de sélénium dans un second solvant organique pour préparer une seconde solution ; (S300) introduire la seconde solution dans la première solution chauffée pour former un noyau de ZnSe ; et (S400) former au moins une coque en couches sur le noyau de ZnSe, la différence d'indice de polarité entre le second solvant organique et le premier solvant organique s'inscrivant dans une plage de 0 à 0,4. 본 발명은 양자점의 제조방법, 및 이에 의해 제조된 양자점에 대한 것으로, 상기 양자점의 제조방법은 (S100) 제1 아연 전구체, 제1 카르복실산계 화합물 및 제1 유기 용매를 포함하는 제1 용액을 가열하는 단계; (S200) 제1 셀레늄 전구체를, 제2 유기 용매에 투입하여 제2 용액을 형성하는 단계; (S300) 상기 가열된 제1 용액에 상기 제2 용액을 투입하여 ZnSe 코어를 형성하는 단계; 및 (S400) 상기 ZnSe 코어 상에 적어도 1층의 쉘을 형성하는 단계;를 포함하고, 상기 제2 유기 용매는 상기 제1 유기 용매와의 극성도(polarity index) 차이가 0 내지 0.4 범위이다.
Bibliography:Application Number: WO2020KR11890