COMPOSITIONS AND METHODS USING SAME FOR NON-CONFORMAL DEPOSITION OF SILICON-CONTAINING FILMS

• Main Authors: WANG, Meiliang, LEI, Xinjian, WANG, Tingmin
• Format: Patent
• Language: English; French
• Published: 18.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

An atomic layer deposition method for depositing a non-conformal silicon and oxygen containing film into surface features comprising vias and/or trenches on one or more substrates. L'invention concerne un procédé de dépôt de couche atomique permettant de déposer un film contenant du silicium et...