COMPOSITIONS AND METHODS USING SAME FOR NON-CONFORMAL DEPOSITION OF SILICON-CONTAINING FILMS

• Main Authors: WANG, Meiliang, LEI, Xinjian, WANG, Tingmin
• Format: Patent
• Language: English; French
• Published: 18.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

An atomic layer deposition method for depositing a non-conformal silicon and oxygen containing film into surface features comprising vias and/or trenches on one or more substrates. L'invention concerne un procédé de dépôt de couche atomique permettant de déposer un film contenant du silicium et de l'oxygène non conformes en des caractéristiques de surface comprenant des trous d'interconnexion et/ou des tranchées sur un ou plusieurs substrats.