NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
A non-volatile memory device includes a first substrate, a second substrate, a memory array, a circuit structure, a bonding structure, and a shielding structure. A second front side of the second substrate faces a first front side of the first substrate. The memory array is disposed on the first sub...
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Main Author | |
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Format | Patent |
Language | English French |
Published |
04.03.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A non-volatile memory device includes a first substrate, a second substrate, a memory array, a circuit structure, a bonding structure, and a shielding structure. A second front side of the second substrate faces a first front side of the first substrate. The memory array is disposed on the first substrate and disposed at the first front side of the first substrate. The circuit structure is disposed on the second substrate and disposed at the second front side of the second substrate. The bonding structure is disposed between the memory array and the circuit structure. The circuit structure is electrically connected with the memory array through the bonding structure. The shielding structure is disposed between the memory array and the circuit structure and surrounds the bonding structure. The shielding structure is electrically connected to a voltage source.
L'invention concerne un dispositif de mémoire non volatile qui comprend un premier substrat, un second substrat, une matrice de mémoire, une structure de circuit, une structure de collage et une structure de blindage. Un second côté avant du second substrat fait face à un premier côté avant du premier substrat. La matrice de mémoire est disposée sur le premier substrat et disposée sur le premier côté avant du premier substrat. La structure de circuit est disposée sur le second substrat et disposée sur le second côté avant du second substrat. La structure de collage est disposée entre la matrice de mémoire et la structure de circuit. La structure de circuit est électriquement connectée à la matrice de mémoire par l'intermédiaire de la structure de collage. La structure de blindage est disposée entre la matrice de mémoire et la structure de circuit et entoure la structure de collage. La structure de blindage est électriquement connectée à une source de tension. |
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Bibliography: | Application Number: WO2019CN102297 |