RADIATION DETECTION SYSTEMS AND METHODS

A semiconductor device includes a semiconductor layer comprising a source region, a drain region, and a gate region disposed between the source and drain regions; and a gate stack disposed over the gate region of the semiconductor layer, the gate stack including a semiconductor layer disposed adjace...

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Bibliographic Details
Main Authors FULLWOOD, Clayton, CLOPTON, Mark, HOSSAIN, Tim Z
Format Patent
LanguageEnglish
French
Published 12.11.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:A semiconductor device includes a semiconductor layer comprising a source region, a drain region, and a gate region disposed between the source and drain regions; and a gate stack disposed over the gate region of the semiconductor layer, the gate stack including a semiconductor layer disposed adjacent a charge storage structure. A neutron sensitive structure is disposed around the semiconductor layer. Un dispositif à semi-conducteur comprend une couche semi-conductrice comprenant une région de source, une région de drain et une région de grille disposée entre les régions de source et de drain; et un empilement de grille disposé sur la région de grille de la couche semi-conductrice, l'empilement de grille comprenant une couche semi-conductrice disposée adjacente à une structure de stockage de charge. Une structure sensible aux neutrons est disposée autour de la couche semi-conductrice.
Bibliography:Application Number: WO2020US29369