TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR

• Main Authors: JIANG, Zhixiong, MENG, Yanhong
• Format: Patent
• Language: Chinese; English; French
• Published: 29.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a TFT array substrate and a manufacturing method therefor. The manufacturing method for the TFT array substrate in the present invention comprises: sequentially manufacturing, on a gate insulation layer, an underlying semiconductor material film, a doped semiconductor material film and a first metal material film; using a photo mask to pattern the underlying semiconductor material film, the doped semiconductor material film and the first metal material film, so as to form an underlying semiconductor layer, a doped semiconductor layer and a metal layer which are sequentially arranged above the gate electrode from bottom to top; and then forming a second metal material film on the gate insulation layer and the metal layer, and patterning the second metal material film, the metal layer and the doped semiconductor layer, so as to form a source electrode contact block, a drain electrode contact block, a source electrode and a drain electrode, so as to be able to reduce the contact re