METHOD FOR PROVIDING DOPED SILICON

A method for doping a substrate is provided. A silicon oxide diffusion barrier layer is formed on a surface of the substrate. At least one dopant layer is deposited over the silicon oxide diffusion barrier layer. A cap layer is deposited over the at least one dopant layer forming a stack of the subs...

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Bibliographic Details
Main Authors MIAO, Tengfei, LAVOIE, Adrien, ABEL, Joseph R, VAN SCHRAVENDIJK, Bart J, KUMAR, Purushottam, JIANG, Gengwei
Format Patent
LanguageEnglish
French
Published 01.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:A method for doping a substrate is provided. A silicon oxide diffusion barrier layer is formed on a surface of the substrate. At least one dopant layer is deposited over the silicon oxide diffusion barrier layer. A cap layer is deposited over the at least one dopant layer forming a stack of the substrate, the silicon oxide diffusion layer, the at least one dopant layer, and the cap layer. The stack is annealed. The cap layer, at least one dopant layer, and the silicon oxide diffusion barrier layer are removed. L'invention concerne un procédé pour doper un substrat. Une couche barrière de diffusion d'oxyde de silicium est formée sur une surface du substrat. Au moins une couche de dopant est déposée sur la couche barrière de diffusion d'oxyde de silicium. Une couche de recouvrement est déposée sur l'au moins une couche de dopant formant un empilement du substrat, de la couche de diffusion d'oxyde de silicium, de l'au moins une couche de dopant et de la couche de recouvrement. L'empilement est recuit. La couche de recouvrement, au moins une couche de dopant et la couche barrière de diffusion d'oxyde de silicium sont retirées.
Bibliography:Application Number: WO2020US23194