SUBSTRATE PROCESSING SYSTEM INCLUDING DUAL ION FILTER FOR DOWNSTREAM PLASMA

A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower c...

Full description

Saved in:
Bibliographic Details
Main Authors HSU, Chih-Hsun, KAWAGUCHI, Mark, KOSCHE, Serge, WHITTEN, Stephen, CHOKSHI, Himanshu, ZHANG, Dan, BRAVO, Andrew Stratton, AMBUROSE, Gnanamani, KON, Shih-Chung
Format Patent
LanguageEnglish
French
Published 30.07.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity. L'invention concerne un système de traitement de substrat comprenant une chambre supérieure et un système de distribution de gaz destiné à fournir un mélange gazeux à la chambre supérieure. Un générateur RF génère un plasma dans la chambre supérieure. Une chambre inférieure comprend un support de substrat. Un double filtre à ions est disposé entre la chambre supérieure et la chambre inférieure. Le double filtre à ions comprend un filtre supérieur comprenant une première pluralité de trous traversants conçus pour filtrer des ions. Un filtre inférieur comprend une deuxième pluralité de trous traversants conçus pour commander l'uniformité du plasma.
Bibliography:Application Number: WO2020US14329