COMPOSITION FOR TUNGSTEN CMP

• Main Authors: IVANOV, Roman A, DOCKERY, Kevin P, LIU, Zhao, ZHANG, Na
• Format: Patent
• Language: English; French
• Published: 09.07.2020
• Subjects: ADHESIVES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NATURAL RESINS; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAINTS; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES

A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate. Une composition de polissage chimico-mécanique comprend un support liquide à base d'eau, des particules abrasives cationiques dispersées dans le support liquide, un premier composé d'acide aminé ayant un point isoélectrique inférieur à 7 et un second composé d'acide aminé ayant un point isoélectrique supérieur à 7. Le pH des compositions varie d'environ 1 à environ 5. L'invention concerne également un procédé permettant le polissage chimico-mécanique d'un substrat comprenant une couche de tungstène, lequel procédé comprend la mise en contact du substrat avec la composition de polissage décrite ci-dessus, le déplacement de la composition de polissage par rapport au substrat et l'abrasion du substrat pour retirer une partie du tungstène du substrat et de cette manière polir le substrat.