CHEMICO-MECHANICAL POLISHING SOLUTION AND USE THEREOF

• Main Authors: YAO, Ying, ZHOU, Wenting, CAI, Xinyuan, MA, Jian, LI, Heng, JING, Jianfen
• Format: Patent
• Language: Chinese; English; French
• Published: 02.07.2020
• Subjects: ADHESIVES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NATURAL RESINS; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAINTS; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES

Disclosed is a chemico-mechanical polishing solution, comprising silica abrasion particles, a nitrogen-containing heterocyclic compound comprising one or more carboxyl groups, and an ethoxylated butoxylated alkyl alcohol. Also disclosed is a use of the chemico-mechanical polishing solution in the polishing of silica, polysilicon, and silicon nitride. The polishing solution of the present invention has a polishing rate for silicon nitride that is far higher than that for silica and polysilicon, and thus finds good use in the chemico-mechanical polishing of a silica/polysilicon stop layer, permitting a good control of the amount of removal of oxides and polysilicon on a substrate surface during the polishing process. L'invention concerne une solution chimico-mécanique de polissage, comprenant des particules abrasives en silice, un composé hétérocyclique azoté comprenant un ou plusieurs groupes carboxyle, et un alcool alkylique éthoxylé butoxylé. L'invention concerne également une utilisation de la solution chim