SYSTEMS AND METHODS FOR LOW PRESSURE DIAMOND GROWTH WITHOUT PLASMA, INCLUDING SEEDING GROWTH

• Main Authors: RAMPERSAUD, Isaac V, HEMMER, Philip R, WEIL, Tanja, ZAPATA, Todd, JELEZKO, Fedor, ALKAHTANI, Masfer Hassan A
• Format: Patent
• Language: English; French
• Published: 07.05.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR RELEVANT APPARATUS; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method for low-pressure diamond growth includes heating a composition comprising a diamond growth seed and a source of reactive carbon to a temperature below 800°C, wherein the heating takes place under low pressure. Responsive to the heating, growing diamonds from the composition. L'invention concerne un procédé de croissance de diamants à basse pression qui consiste à chauffer une composition comprenant un germe de croissance de diamant et une source de carbone réactif à une température inférieure à 800 °C, le chauffage ayant lieu sous basse pression. Le procédé consiste en outre, en réponse au chauffage, à faire croître des diamants à partir de la composition.