EXTREME ULTRAVIOLET MASK BLANK DEFECT REDUCTION

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first mol...

Full description

Saved in:
Bibliographic Details
Main Authors LIU, Shuwei, ABHINAND, Sai, JINDAL, Vibhu, FONG, Hui Ni Grace, CHANG, Ke
Format Patent
LanguageEnglish
French
Published 09.01.2020
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target. L'invention concerne des ébauches de masque à rayons ultraviolets extrêmes (EUV), leurs procédés de fabrication et des systèmes de production s'y rapportant. Le procédé de formation d'une ébauche de masque EUV consiste à placer un substrat dans une chambre de dépôt physique en phase vapeur multi-cathode, la chambre comprenant au moins trois cibles, une première cible en molybdène adjacente à un premier côté d'une cible en silicium et une deuxième cible en molybdène adjacente à un deuxième côté de la cible en silicium.
Bibliography:Application Number: WO2019US40682