METHODS FOR PRODUCING A SILICON INGOT THAT INVOLVE MONITORING A MOVING AVERAGE OF THE INGOT NECK PULL RATE

• Main Authors: CHEN, Chi-Yung, TSENG, Hsien-Ta, SHEU, Yeong-Ming, LU, Zheng, WU, Chun-Sheng, TSAI, Feng-Chien
• Format: Patent
• Language: English; French
• Published: 02.01.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Methods for producing monocrystalline silicon ingots in which the pull rate during neck growth is monitored are disclosed. A moving average of the pull rate may be calculated and compared to a target moving average to determine if dislocations were not eliminated and the neck is not suitable for producing an ingot main body suspended from the neck. L'invention concerne des procédés de production de lingots de silicium monocristallin dans lesquels la vitesse de traction pendant la croissance du col est surveillée. Une moyenne mobile de la vitesse de traction peut être calculée et comparée à une moyenne mobile cible pour déterminer si des dislocations n'ont pas été éliminées et si le col n'est pas approprié pour produire un corps principal de lingot suspendu à partir du col.