DEVICE AND METHOD FOR IMPROVING UNIFORMITY OF FILM THICKNESS

• Main Authors: ZHONG, Xiaolan, KANG, Xiaoxu
• Format: Patent
• Language: Chinese; English; French
• Published: 08.08.2019
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A device for improving the uniformity of film thickness, comprising a PECVD machine (40) having dual processing chambers (10, 20). Each of the processing chambers is provided with a wafer heating platform (11, 21) and a radio frequency generating mechanism (14, 24). The wafer heating platform of at least one processing chamber is a rotating speed control platform, wherein the number of rotations of the rotating speed control platform within a deposition time is an integer, so as to ensure that radio frequency overlap effects generated by the two radio frequency generating mechanisms have a consistent effect on positions at inner and outer rings of a wafer adhered to the wafer heating platform, and to eliminate variations in the thickness of a film deposited on a silicon wafer caused by radio frequency overlap. Further disclosed is a method for improving the uniformity of film thickness. La présente invention concerne un dispositif pour améliorer l'uniformité d'épaisseur d'un film, comprenant une machine de dé