METHOD FOR VALIDATING THE THERMAL HISTORY OF A SEMICONDUCTOR INGOT

• Main Authors: FAVRE, Wilfried, VEIRMAN, Jordi, LETTY, Elénore
• Format: Patent
• Language: English; French
• Published: 20.06.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; METALLURGY; PHYSICS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TESTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to an experimental method for validating a thermal history of a semiconductor ingot obtained by simulation of a crystallization process. This method comprises the following steps: a) measuring the concentration of interstitial oxygen in a portion of the semiconductor ingot; b) calculating a theoretical value of the concentration of thermal donors formed during the crystallization process, from the measurement of the concentration of interstitial oxygen and from the thermal history in the portion of the semiconductor ingot; c) measuring an experimental value of the concentration of thermal donors in the portion of the semiconductor ingot; and d) comparing the theoretical and experimental values of the concentration of thermal donors. L'invention concerne une méthode de validation expérimentale d'une histoire thermique d'un lingot semi-conducteur obtenue par simulation d'un procédé de cristallisation. Cette méthode comprend les étapes suivantes : a) mesurer la concentration en oxygène interstitiel dans une portion du lingot semi-conducteur; b) calculer une valeur théorique de la concentration en donneurs thermiques formés lors du procédé de cristallisation, à partir de la mesure de la concentration en oxygène interstitiel et à partir de l'histoire thermique dans la portion du lingot semi-conducteur; c) mesurer une valeur expérimentale de la concentration en donneurs thermiques dans la portion du lingot semi-conducteur; et d) comparer les valeurs théorique et expérimentale de la concentration en donneurs thermiques.