SINGLE PHOTON SOURCE DEVICE, METHOD FOR MANUFACTURING SAME, AND USE OF SAME

• Main Authors: PENG, Xiaogang, DAI, Xingliang, JIN, Yizheng, PU, Chaodan, FANG, Wei, LIN, Xing
• Format: Patent
• Language: Chinese; English; French
• Published: 28.02.2019
• Subjects: ELECTRICITY

Provided are a single photon source device, a method for manufacturing same, and use of same. The single photon source device comprises a first electrode layer, a first carrier transmission layer, a quantum dot luminescence layer, a second carrier transmission layer, and a second electrode layer which are successively superposed, wherein the quantum dot luminescence layer comprises an insulating material and quantum dots scattered in the insulating material, and the adjacent distances between at least some of the quantum dots are larger than or equal to the central wavelength of a luminescent spectrum of a quantum dot. The insulating material is arranged in the quantum dot luminescence layer, and because of limitation in selecting existing carrier materials, the transmission speed of a hole is slower than the transmission speed of an electron, and the insulating property of the insulating material is used to balance balanced injection of the electron and the hole at two sides of the quantum dot luminescence l