POWER MODULE

• Main Authors: ICHIKAWA Kohki, TANIGUCHI Yoshitaka, SAKAI Atsushi, HIROTSURU Hideki
• Format: Patent
• Language: English; French; Japanese
• Published: 07.02.2019
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRIC ELEMENTS; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; SEMICONDUCTOR DEVICES

A power module 1 comprising a base plate 2, a ceramic insulating substrate 4 joined onto the base plate 2, and a semiconductor element 6 joined onto the ceramic insulating substrate 4, wherein a surface 2b of the base plate 2 on the opposite side from the ceramic insulating substrate 4 has convex warpage 2c, and the linear thermal expansion coefficient α1 (× 10 - 6/K) and the linear thermal expansion coefficient α2 (× 10 - 6/K) during a drop in temperature from 150 to 25˚C satisfy formula (1). Selon la présente invention, un module de puissance (1) comprend une plaque de base (2), un substrat isolant céramique (4) assemblé sur la plaque de base (2), et un élément semi-conducteur (6) assemblé sur le substrat isolant céramique (4), une surface (2b) de la plaque de base (2) sur le côté opposé au substrat isolant céramique (4) présentant un gauchissement convexe (2c), et le coefficient de dilatation thermique linéaire α1 (× 10 - 6/K) et le coefficient de dilatation thermique linéaire α2 (× 10 - 6/K) pendant une chute de température de 150 à 25 °C satisfont à la formule (1). Drawing_references_to_be_translated: Nothing to translate ベース板２と、ベース板２上に接合されたセラミックス絶縁基板４と、セラミックス絶縁基板４上に接合された半導体素子６と、を備えるパワーモジュールであって、ベース板２のセラミックス絶縁基板４と反対側の面２ｂが凸状の反り２ｃを有し、温度１５０℃から２５℃における降温時のベース板２の線熱膨張係数α１（×１０－６／Ｋ）及びセラミックス絶縁基板４の線熱膨張係数α２（×１０－６／Ｋ）が下記式（１）を満たす、パワーモジュール１。