GALLIUM ARSENIDE CRYSTALLINE BODY AND GALLIUM ARSENIDE CRYSTAL SUBSTRATE

• Main Authors: ISHIKAWA, Yukio, AKITA, Katsushi, FUKUNAGA, Hiroshi
• Format: Patent
• Language: English; French; Japanese
• Published: 10.01.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

This gallium arsenide crystalline body has an etch pit density of 10∙cm-2 to 10000∙cm-2 and an oxygen concentration of less than 7.0×1015 atoms∙cm-3. This gallium arsenide crystal substrate has an etch pit density of 10∙cm-2 to 10000∙cm-2 and an oxygen concentration of less than 7.0×1015 atoms∙cm-3. Cette invention concerne un corps cristallin d'arséniure de gallium présentant une densité de piqûre d'attaque de 10∙cm-2 à 10000∙cm-2 et une concentration en oxygène inférieure à 7,0×1015 atomes∙cm-3. Ledit substrat de cristal d'arséniure de gallium a une densité de piqûre d'attaque de 10∙cm-2 à 10000∙cm-2 et une concentration en oxygène inférieure à 7,0×1015 atomes∙cm-3. ヒ化ガリウム結晶体は、エッチングピット密度が１０個・ｃｍ-2以上１００００個・ｃｍ-2以下であり、酸素濃度が７．０×１０15原子・ｃｍ-3未満である。ヒ化ガリウム結晶基板は、エッチングピット密度が１０個・ｃｍ-2以上１００００個・ｃｍ-2以下であり、酸素濃度が７．０×１０15原子・ｃｍ-3未満である。