FIELD EFFECT TRANSISTORS WITH WIDE BANDGAP MATERIALS

An electronic device comprises a channel layer on a buffer layer on a substrate. The channel layer has a first portion and a second portion adjacent to the first portion. The first portion comprises a first semiconductor. The second portion comprises a second semiconductor that has a bandgap greater...

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Bibliographic Details
Main Author MA, Sean T
Format Patent
LanguageEnglish
French
Published 03.01.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An electronic device comprises a channel layer on a buffer layer on a substrate. The channel layer has a first portion and a second portion adjacent to the first portion. The first portion comprises a first semiconductor. The second portion comprises a second semiconductor that has a bandgap greater than a bandgap of the first semiconductor. Un dispositif électronique comprend une couche de canal sur une couche tampon sur un substrat. La couche de canal comprend une première partie et une seconde partie adjacente à la première partie. La première partie comprend un premier semi-conducteur. La seconde partie comprend un second semi-conducteur qui a une largeur de bande interdite supérieure à une largeur de bande interdite du premier semi-conducteur.
Bibliography:Application Number: WO2017US40328