CONTINUOUS SINGLE CRYSTAL GROWTH OF GRAPHENE

• Main Authors: STEHLE, Yijing Y, SMIRNOV, Sergei N, LIST, III, VLASSIOUK, Ivan V
• Format: Patent
• Language: English; French
• Published: 05.07.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front. L'invention concerne des systèmes et des procédés pour synthétiser du graphène monocristallin continu. Un substrat catalytique est aspiré à travers une chambre de dépôt chimique en phase vapeur dans une première direction longitudinale tout en faisant circuler de l'hydrogène gazeux à travers la chambre de dépôt chimique en phase vapeur dans la même direction longitudinale. Un gaz précurseur d'hydrocarbure est alimenté directement au-dessus d'une surface du substrat catalytique. Un gradient de concentration élevée du précurseur d'hydrocarbure au niveau du front de croissance cristalline est créé pour favoriser la croissance d'un film de graphène monocristallin continu tout en supprimant la croissance de domaines de germe devant le front de croissance cristalline.