SPLIT-GATE FLASH CELL FORMED ON RECESSED SUBSTRATE

• Main Authors: CHEN, Chun, PAK, James, KIM, Unsoon, KANG, Inkuk, KANG, Sung-Taeg, CHANG, Kuo-Tung
• Format: Patent
• Language: English; French
• Published: 21.06.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device including a non-volatile memory (NVM) cell and method of making the same are disclosed. The semiconductor device includes a metal-gate logic transistor formed on a logic region of a substrate, and the NVM cell integrally formed in a first recess in a memory region of the same...