METHOD FOR MANUFACTURING SILICON NITRIDE THIN FILM USING PLASMA ATOMIC LAYER DEPOSITION

• Main Authors: PARK, Gun-Joo, LEE, Sang-Do, PARK, Jeong Joo, KIM, Myong Woon, SEOK, Jang Hyeon, LEE, Sang Ick, JANG, Se Jin, PARK, Joong Jin, KIM, Sung Gi, YANG, Byeong-il
• Format: Patent
• Language: English; French; Korean
• Published: 25.01.2018
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

The present invention relates to a method for manufacturing a high-purity silicon nitride thin film using plasma atomic layer deposition. More specifically, the present invention can realize improved thin film efficiency and a step coverage by performing a two-stage plasma excitation step and can provide a high-purity silicon nitride thin film with an improved deposition rate despite a low film-forming temperature. La présente invention concerne un procédé de fabrication d'un film mince de nitrure de silicium de haute pureté au moyen d'un dépôt de couche atomique de plasma. Plus précisément, la présente invention permet d'obtenir une efficacité de film mince améliorée et un couverture graduelle par exécution d'une étape d'excitation de plasma à deux étages et permet de fournir un film mince de nitrure de silicium de haute pureté ayant une vitesse de dépôt améliorée malgré une faible température de formation de film. 본 발명은 플라즈마 원자층 증착법을 이용한 고순도 실리콘 질화 박막의 제조방법에 관한 것이다. 보다 상세하게, 본 발명은 두 단계의 플라즈마 여기 단계를 수행함으로써, 향상된 박막 효율 및 스텝 커버리지의 구현이 가능하고, 저온의 성막온도에도 불구하고 향상된 증착율로 고순도의 실리콘 질화 박막을 제공할 수 있다.