RAW MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM

• Main Authors: SHIRATORI, Tsubasa, SATO, Hiroki, YAMADA, Naoki, SATO, Haruyoshi
• Format: Patent
• Language: English; French; Japanese
• Published: 30.11.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided is a raw material which is for forming a thin film and contains a compound represented by general formula (1) below, where R1 represents a linear or branched alkyl group having 2-4 carbon atoms, R2-R5 each independently represent a linear or branched alkyl group having 1-4 carbon atoms, A represents an alkanediyl group having 1-4 carbon atoms, and M represents titanium, zirconium, or hafnium. When M is zirconium, A is an alkanediyl group having 3 or 4 carbon atoms. When M is titanium and hafnium, A is preferably an alkanediyl group having 2 or 3 carbon atoms. When M is zirconium, A is preferably an alkanediyl group having 3 carbon atoms. L'invention concerne une matière première destinée à former un film mince et contenant un composé représenté par la formule générale (1) ci-dessous. Dans ladite formule, R1 représente un groupe alkyle linéaire ou ramifié comportant 2 à 4 atomes de carbone; R2 à R5 représentent chacun, indépendamment, un groupe alkyle linéaire ou ramifié comportant 1 à 4 atomes de carbone; A représente un groupe alcanediyle comportant 1 à 4 atomes de carbone; et M représente titane, zirconium ou hafnium. Lorsque M est zirconium, A est un groupe alcanediyle comportant 3 ou 4 atomes de carbone. Lorsque M est titane et hafnium, A est, de préférence, un groupe alcanediyle comportant 2 ou 3 atomes de carbone. Lorsque M est zirconium, A est, de préférence, un groupe alcanediyle comportant 3 atomes de carbone. 下記一般式（１）で表される化合物を含有してなる薄膜形成用原料。式中、Ｒ1は炭素原子数２～４の直鎖又は分岐状のアルキル基を表し、Ｒ2～Ｒ5は各々独立に炭素原子数１～４の直鎖又は分岐状のアルキル基を表し、Ａは炭素原子数１～４のアルカンジイル基を表し、Ｍはチタン、ジルコニウム又はハフニウムを表す。ただし、Ｍがジルコニウムの場合は、Ａは炭素原子数３又は４のアルカンジイル基である。Ｍがチタン及びハフニウムである場合、Ａは炭素原子数２又は３のアルカンジイル基であることが好ましい。Ｍがジルコニウムである場合、Ａは炭素原子数３のアルカンジイル基であることが好ましい。