METHOD FOR ANALYZING MONOCRYSTALLINE SILICON WAFER AND WAFER MANUFACTURED THEREBY

• Main Authors: HONG, Se Jun, PARK, Sang Soo, LEE, Jae Hyeong
• Format: Patent
• Language: English; French; Korean
• Published: 16.11.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method for analyzing a monocrystalline silicon wafer of an embodiment comprises the steps of: heat-treating a monocrystalline silicon wafer to be analyzed; obtaining the cumulative distribution of oxygen precipitation nuclei density included in the heat-treated monocrystalline silicon wafer by temperature; obtaining a characteristic temperature at which a rate of generation of oxygen precipitation nuclei is maximized, using cumulative distribution; and identifying the type of point defects included in the monocrystalline silicon wafer by using the characteristic temperature. Selon un mode de réalisation, l'invention concerne un procédé d'analyse d'une plaquette de silicium monocristallin dont les étapes consistent : à traiter thermiquement une plaquette de silicium monocristallin à analyser; à obtenir la distribution cumulative de la densité de noyaux de précipitation d'oxygène incluse dans la plaquette de silicium monocristallin traitée thermiquement selon la température; à obtenir une température caractéristique à laquelle un taux de génération de noyaux de précipitation d'oxygène est maximisé, au moyen de la distribution cumulative; et à identifier le type de défauts de points inclus dans la plaquette de silicium monocristallin au moyen de la température caractéristique. 실시 예의 단결정 실리콘 웨이퍼 분석 방법은 분석 대상이 되는 단결정 실리콘 웨이퍼를 열처리하는 단계와, 열처리된 단결정 실리콘 웨이퍼에 포함된 산소 석출핵 밀도의 온도별 누적 분포를 구하는 단계와, 누적 분포를 이용하여, 산소 석출핵의 생성 속도가 최대가 되는 특성 온도를 구하는 단계 및 특성 온도를 이용하여 단결정 실리콘 웨이퍼에 포함된 점결함의 종류를 식별하는 단계를 포함한다.