SEMICONDUCTOR DEVICE

• Main Author: OYAMA Kazuhiro
• Format: Patent
• Language: English; French; Japanese
• Published: 10.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a semiconductor device that uses a wide-gap semiconductor, wherein a gate insulating film (7) is formed of a material that has a barrier against a minority carrier of an n-type body layer (3) and does not have a barrier against a minority carrier of a p-type drift layer (2). This makes i...