ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

An ultraviolet light emitting device is disclosed. An ultraviolet light emitting device according to a first embodiment of the present invention comprises: a substrate having a first surface and a second surface facing the first surface; and a light emitting diode comprising a first type semiconduct...

Full description

Saved in:
Bibliographic Details
Main Authors CHO, Hong Suk, IN, Chi Hyun, CHAE, Jong Hyeon, JANG, Seong Kyu, LEE, Kyu Ho, YOON, Yeo Jin
Format Patent
LanguageEnglish
French
Korean
Published 11.05.2017
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:An ultraviolet light emitting device is disclosed. An ultraviolet light emitting device according to a first embodiment of the present invention comprises: a substrate having a first surface and a second surface facing the first surface; and a light emitting diode comprising a first type semiconductor layer, an active layer which emits ultraviolet light, and a second type semiconductor layer, the light emitting diode being formed on the first surface of the substrate, wherein the area of the substrate divided by the light emitting area of the light emitting diode may be ≤ 6.5. L'invention concerne un dispositif d'émission de lumière ultraviolette. Un dispositif d'émission de lumière ultraviolette selon un premier mode de réalisation de la présente invention comporte: un substrat présentant une première surface et une deuxième surface faisant face à la première surface; et une diode électroluminescente comportant une couche de semi-conducteur d'un premier type, une couche active qui émet une lumière ultraviolette, et une couche de semi-conducteur d'un deuxième type, la diode électroluminescente étant formée sur la première surface du substrat, le rapport de l'aire du substrat à l'aire d'émission de lumière de la diode électroluminescente pouvant être ≤ 6,5. 자외선 발광 소자가 개시된다. 본 발명의 제1 실시예에 따른 자외선 발광소자는, 제1면 및 제1면에 대향하는 제2면을 갖는 기판; 상기 기판의 제1면에 형성되며, 제1형 반도체층, 자외선 광을 방출하는 활성층 및 제2형 반도체층을 구비한 발광다이오드를 포함하며, 상기 기판의 면적/발광다이오드의 발광면적 ≤ 6.5일 수 있다.
Bibliography:Application Number: WO2016KR12460