METAL FREE GRAPHENE SYNTHESIS ON INSULATING OR SEMICONDUCTING SUBSTRATES

• Main Authors: TOMOVIC, Zeljko, BINDER, Axel, WEBER, Nils-Eike, WAGNER, Norbert
• Format: Patent
• Language: English; French
• Published: 20.04.2017
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

The present invention relates to a process for preparing graphene by chemical vapour deposition (CVD), wherein an insulating or semiconducting inorganic substrate is provided in a chemical vapour deposition (CVD) reactor and subjected to a thermal pre-treatment in a hydrogen-containing atmosphere,and graphene is deposited on the inorganic substrate by bringing a gaseous oxidant and a carbon-containing precursor into contact with the inorganic substrate. La présente invention concerne un procédé de préparation de graphène par dépôt chimique en phase vapeur (CVD), un substrat inorganique isolant ou semi-conducteur étant utilisé dans un réacteur de dépôt chimique en phase vapeur (CVD) et soumis à un prétraitement thermique dans une atmosphère contenant de l'hydrogène, et du graphène étant déposé sur le substrat inorganique en mettant en contact un oxydant gazeux et un précurseur contenant du carbone avec le substrat inorganique.