EUTECTIC ELECTRODE STRUCTURE OF LED FLIP CHIP, AND LED FLIP CHIP

• Main Authors: LIN, Xiaoxiong, HE, Anhe, HSU, Chenke, ZHENG, Jiansen, LIN, Suhui, PENG, Kangwei
• Format: Patent
• Language: Chinese; English; French
• Published: 20.04.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A eutectic electrode structure of an LED flip chip, and LED flip chip, comprising: a substrate (200); a first semiconductor layer (201); a second semiconductor layer (203), wherein a first localized imperfection region is located on a portion of the second semiconductor layer (203) and extends downward to the first semiconductor layer (201); a first metal layer (206) located on a portion of the first semiconductor layer (201); a second metal layer (205) located on a portion of the second semiconductor layer (203); an insulation layer (207) covering the first metal layer (206), the second metal layer (205), the second semiconductor layer (203), and the first semiconductor layer (201) at the localized imperfection region, and having opening structures respectively located at the first metal layer (206) and the second metal layer (205); and a eutectic electrode structure located at the insulation layer (207) having the openings, wherein the eutectic electrode structure is formed by first eutectic layers (2081, 2