SEMICONDUCTOR SUBSTRATE, PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
This semiconductor substrate is provided with, in the surface thereof, a plurality of protruding sections (11) and recessed sections (12) among the protruding sections (11). Each of the protruding sections (11) is provided with sloped surfaces (11c). Each of the recessed sections (12) is provided wi...
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Main Authors | , , |
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Format | Patent |
Language | English French Japanese |
Published |
30.03.2017
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Subjects | |
Online Access | Get full text |
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Summary: | This semiconductor substrate is provided with, in the surface thereof, a plurality of protruding sections (11) and recessed sections (12) among the protruding sections (11). Each of the protruding sections (11) is provided with sloped surfaces (11c). Each of the recessed sections (12) is provided with the bottom of a bent surface. The angle of the sloped surfaces (11c) of the protruding sections (11) is larger than 49.5° but equal to or smaller than 55.2°. The curvature radius of the bent surface of each of the recessed sections (12) is larger than 13 nm.
La présente invention concerne un substrat semi-conducteur qui est pourvu de, dans la surface de celui-ci, une pluralité de sections saillantes (11) et de sections évidées (12) parmi les sections saillantes (11). Chacune des sections saillantes (11) est pourvue de surfaces inclinées (11c). Chacune des sections évidées (12) est pourvue d'un fond ayant une surface courbée. L'angle des surfaces inclinées (11c) des sections saillantes (11) est supérieur à 49,5° mais égal ou inférieur à 55,2°. Le rayon de courbure de la surface courbée de chacune des sections évidées (12) est supérieur à 13 nm.
半導体基板は、複数の凸部(11)と、凸部(11)の間の凹部(12)とを表面に備えている。凸部(11)は傾斜面(11c)を備えている。凹部(12)は曲面の底を備えている。凸部(11)は傾斜面(11c)の角度が49.5°よりも大きく55.2°以下である。凹部(12)の曲面の曲率半径が13nmよりも大きい。 |
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Bibliography: | Application Number: WO2016JP73889 |