SEMICONDUCTOR SUBSTRATE, PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT

• Main Authors: MORI, Takeshi, ISHII, Masahito, OKAMOTO, Chikao
• Format: Patent
• Language: English; French; Japanese
• Published: 30.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

This semiconductor substrate is provided with, in the surface thereof, a plurality of protruding sections (11) and recessed sections (12) among the protruding sections (11). Each of the protruding sections (11) is provided with sloped surfaces (11c). Each of the recessed sections (12) is provided with the bottom of a bent surface. The angle of the sloped surfaces (11c) of the protruding sections (11) is larger than 49.5° but equal to or smaller than 55.2°. The curvature radius of the bent surface of each of the recessed sections (12) is larger than 13 nm. La présente invention concerne un substrat semi-conducteur qui est pourvu de, dans la surface de celui-ci, une pluralité de sections saillantes (11) et de sections évidées (12) parmi les sections saillantes (11). Chacune des sections saillantes (11) est pourvue de surfaces inclinées (11c). Chacune des sections évidées (12) est pourvue d'un fond ayant une surface courbée. L'angle des surfaces inclinées (11c) des sections saillantes (11) est supérieur à 49,5° mais égal ou inférieur à 55,2°. Le rayon de courbure de la surface courbée de chacune des sections évidées (12) est supérieur à 13 nm. 半導体基板は、複数の凸部（１１）と、凸部（１１）の間の凹部（１２）とを表面に備えている。凸部（１１）は傾斜面（１１ｃ）を備えている。凹部（１２）は曲面の底を備えている。凸部（１１）は傾斜面（１１ｃ）の角度が４９．５°よりも大きく５５．２°以下である。凹部（１２）の曲面の曲率半径が１３ｎｍよりも大きい。