OXIDE SINTERED BODY, METHOD FOR PRODUCING SAME, SPUTTERING TARGET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: WATATANI, Kenichi, MIYANAGA, Miki, AWATA, Hideaki
• Format: Patent
• Language: English; French; Japanese
• Published: 23.03.2017
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

Provided is an oxide sintered body containing indium, tungsten and zinc, which contains a first crystal phase that is a main component of the oxide sintered body and contains a bixbyite crystal phase and a second crystal phase that has a higher zinc content than the first crystal phase, and wherein the particles constituting the second crystal phase have an average major axis length of from 3 μm to 50 μm (inclusive) and an average aspect ratio of from 4 to 50 (inclusive). L'invention concerne un corps d'oxyde fritté contenant de l'indium, du tungstène et du zinc, qui contient une première phase cristalline qui est un constituant principal du corps d'oxyde fritté et contient une phase cristalline bixbyite et une seconde phase cristalline qui a une teneur en zinc supérieure à celle de la première phase cristalline ; les particules constituant la deuxième phase cristalline ayant une longueur moyenne d'axe principal allant de 3 µm à 50 µm (inclus) et un rapport d'aspect moyen de 4 à 50 (inclus). 　インジウム、タングステンおよび亜鉛を含有する酸化物焼結体であって、酸化物焼結体の主成分であり、ビックスバイト型結晶相を含む第１結晶相と、第１結晶相よりも亜鉛の含有率が高い第２結晶相とを含み、第２結晶相を構成する粒子は、平均長軸径が３μｍ以上５０μｍ以下であり、平均アスペクト比が４以上５０以下である酸化物焼結体が提供される。