BALANCING PROGRAMMING SPEEDS OF MEMORY CELLS IN A 3D STACKED MEMORY

• Main Authors: MUI, Man L, DONG, Yingda, SUN, Yongke
• Format: Patent
• Language: English; French
• Published: 29.12.2016
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

Programming techniques for a three-dimensional stacked memory device provide compensation for different intrinsic programming speeds of different groups of memory cells based on the groups' locations relative to the edge of a word line layer. A larger distance from the edge is associated with a...