METAL-GATE WITH AN AMORPHOUS METAL LAYER

• Main Authors: XU, JEFFREY JUNHAO, YEAP, CHOH FEI, RIM, KERN, SONG, STANLEY SEUNGCHUL, WANG, ZHONGZE
• Format: Patent
• Language: English; French
• Published: 31.03.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A particular semiconductor device includes a substrate, a source contact, a drain contact, and a metal-gate. The substrate includes a source region, a drain region, and a channel. The source contact is coupled to the source region. The drain contact is coupled to the drain region. The metal-gate is...