METAL-GATE WITH AN AMORPHOUS METAL LAYER

A particular semiconductor device includes a substrate, a source contact, a drain contact, and a metal-gate. The substrate includes a source region, a drain region, and a channel. The source contact is coupled to the source region. The drain contact is coupled to the drain region. The metal-gate is...

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Bibliographic Details
Main Authors XU, JEFFREY JUNHAO, YEAP, CHOH FEI, RIM, KERN, SONG, STANLEY SEUNGCHUL, WANG, ZHONGZE
Format Patent
LanguageEnglish
French
Published 31.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A particular semiconductor device includes a substrate, a source contact, a drain contact, and a metal-gate. The substrate includes a source region, a drain region, and a channel. The source contact is coupled to the source region. The drain contact is coupled to the drain region. The metal-gate is coupled to the channel. The metal-gate includes an amorphous metal layer. L'invention concerne un dispositif à semi-conducteur particulier qui comprend un substrat, un contact de source, un contact de drain et une grille métallique. Le substrat comprend une zone de source, une zone de drain et un canal. Le contact de source est couplé à la zone de source. Le contact de drain est couplé à la zone de drain. La grille métallique est couplée au canal. La grille métallique comprend une couche métallique amorphe.
Bibliography:Application Number: WO2015US48175