SEMICONDUCTOR DEVICE
This semiconductor device (100) is provided with: a metal plate (for example, a heatsink (130)); a semiconductor chip (110) provided at the first surface (131) side of the metal plate; an insulating resin layer (140) joined to a second surface (132) at the reverse side from the first surface (131) o...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English French Japanese |
Published |
07.01.2016
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Abstract | This semiconductor device (100) is provided with: a metal plate (for example, a heatsink (130)); a semiconductor chip (110) provided at the first surface (131) side of the metal plate; an insulating resin layer (140) joined to a second surface (132) at the reverse side from the first surface (131) of the metal plate; and a molded resin (180) sealing the semiconductor chip (110) and the metal plate. The insulating resin layer (140) includes secondary aggregated particles (144) resulting from the isotropic aggregation of primary particles (143) of scaly boron nitride. When the thickness of the insulating resin layer (140) is D and the average particle size of the secondary aggregated particles (144) is d, d/D is 0.05-0.8 inclusive.
L'invention concerne un dispositif semi-conducteur (100) comprenant : une plaque métallique (par exemple, un dissipateur de chaleur (130)) ; une puce semi-conductrice (110) disposée du côté première surface (131) de la plaque métallique ; une couche de résine isolante (140) reliée à une deuxième surface (132) du côté opposé à la première surface (131) de la plaque métallique ; et une résine moulée (180) scellant la puce semi-conductrice (110) et la plaque métallique. La couche de résine isolante (140) contient des particules agrégées secondaires (144) résultant de l'agrégation isotrope de particules primaires (143) de nitrure de bore écailleux. Lorsque l'épaisseur de la couche de résine isolante (140) est D et la taille moyenne des particules agrégées secondaires (144) est d, d/D est de 0,05 à 0,8 inclus.
半導体装置(100)は、金属板(例えばヒートシンク(130))と、金属板の第1面(131)側に設けられた半導体チップ(110)と、金属板の第1面(131)とは反対側の第2面(132)に接合された絶縁樹脂層(140)と、半導体チップ(110)および金属板を封止しているモールド樹脂(180)と、を備えている。絶縁樹脂層(140)は、鱗片状窒化ホウ素の一次粒子(143)が等方的に凝集してなる二次凝集粒子(144)を含んでいる。絶縁樹脂層(140)の厚みをD、二次凝集粒子(144)の平均粒子径をdとすると、d/Dが、0.05以上0.8以下である。 |
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AbstractList | This semiconductor device (100) is provided with: a metal plate (for example, a heatsink (130)); a semiconductor chip (110) provided at the first surface (131) side of the metal plate; an insulating resin layer (140) joined to a second surface (132) at the reverse side from the first surface (131) of the metal plate; and a molded resin (180) sealing the semiconductor chip (110) and the metal plate. The insulating resin layer (140) includes secondary aggregated particles (144) resulting from the isotropic aggregation of primary particles (143) of scaly boron nitride. When the thickness of the insulating resin layer (140) is D and the average particle size of the secondary aggregated particles (144) is d, d/D is 0.05-0.8 inclusive.
L'invention concerne un dispositif semi-conducteur (100) comprenant : une plaque métallique (par exemple, un dissipateur de chaleur (130)) ; une puce semi-conductrice (110) disposée du côté première surface (131) de la plaque métallique ; une couche de résine isolante (140) reliée à une deuxième surface (132) du côté opposé à la première surface (131) de la plaque métallique ; et une résine moulée (180) scellant la puce semi-conductrice (110) et la plaque métallique. La couche de résine isolante (140) contient des particules agrégées secondaires (144) résultant de l'agrégation isotrope de particules primaires (143) de nitrure de bore écailleux. Lorsque l'épaisseur de la couche de résine isolante (140) est D et la taille moyenne des particules agrégées secondaires (144) est d, d/D est de 0,05 à 0,8 inclus.
半導体装置(100)は、金属板(例えばヒートシンク(130))と、金属板の第1面(131)側に設けられた半導体チップ(110)と、金属板の第1面(131)とは反対側の第2面(132)に接合された絶縁樹脂層(140)と、半導体チップ(110)および金属板を封止しているモールド樹脂(180)と、を備えている。絶縁樹脂層(140)は、鱗片状窒化ホウ素の一次粒子(143)が等方的に凝集してなる二次凝集粒子(144)を含んでいる。絶縁樹脂層(140)の厚みをD、二次凝集粒子(144)の平均粒子径をdとすると、d/Dが、0.05以上0.8以下である。 |
Author | HIRASAWA KAZUYA KUROKAWA MOTOMI MOCHIZUKI SHUNSUKE NAGAHASHI KEITA KITAGAWA KAZUYA TSUDA MIKA SHIRATO YOJI |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SEMICONDUCTOR DEVICE |
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