SINGLE CRYSTAL METAL FILM CONTAINING HYDROGEN ATOMS OR HYDROGEN IONS AND METHOD FOR MANUFACTURING SAME

• Main Authors: PARK, HO BUM, KIM, HANSU, PARK, SUNMI, YOON, HEE WOOK, LEE, MIN YONG
• Format: Patent
• Language: English; French; Korean
• Published: 17.12.2015
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a single crystal metal film containing hydrogen atoms or hydrogen ions, which is oriented only with the (111) crystal face on a substrate or without a substrate, and a method for manufacturing the same. According to the present invention, a single crystal metal film containing hydrogen ions, which is oriented only with the (111) crystal face, can be formed into various shapes, such as a foil, a flat plate, a block, and a tube, even without an expensive substrate only by subjecting a metal precursor having crystallinity and a crystal face preferred orientation to a heat treatment process under a hydrogen atmosphere. Further, since electrical conductivity is improved by containing hydrogen atoms or hydrogen ions, the single crystal metal film can be used as a material for a display driving chip, a semi-conductor device, a lithium secondary battery, a fuel cell, a solar cell or a gas sensor. La présente invention concerne un film métallique monocristallin contenant des atomes d'hydrogène ou des ions hydrogène, qui est orienté uniquement avec la face cristalline (111) sur un substrat ou sans substrat, et un procédé pour le fabriquer. Selon la présente invention, un film métallique monocristallin contenant des ions hydrogène, qui est orienté uniquement avec la face cristalline (111), peut être formé en diverses formes, telles qu'une feuille, une plaque plate, un bloc et un tube, même sans substrat coûteux, seulement en soumettant un précurseur métallique ayant une cristallinité et une orientation préférée de face cristalline à un processus de traitement à chaud sous une atmosphère d'hydrogène. En outre, la conductivité électrique étant améliorée parce qu'il contient des atomes d'hydrogène ou des ions hydrogène, le film métallique monocristallin peut être utilisé en tant que matériau pour une puce de commande d'affichage, un dispositif semiconducteur, une batterie secondaire au lithium, une pile à combustible, une cellule solaire ou un capteur de gaz. 본 발명은 기판 위에, 또는 기판 없이 (111) 결정면으로만 배향된 수소 원자 또는 수소 이온을 함유하는 단결정 금속막 및 그 제조방법에 관한 것이다. 본 발명에 따르면, 고가의 기판 없이도 결정성 및 결정면의 우선 배향성을 갖는 금속 전구체로부터 수소분위기 하에서 열처리 공정만으로 (111) 결정면으로만 배향된 수소이온을 함유하는 단결정 금속막을 호일, 평판, 블록 또는 튜브형의 다양한 형태로 형성하는 것이 가능하고, 수소 원자 또는 수소 이온을 함유하여 전기전도도가 향상되므로 디스플레이 구동 칩, 반도체 소자, 리튬이차전지, 연료전지, 태양전지 또는 가스 센서용 소재에 응용할 수 있다.