SEMICONDUCTOR DEVICE
This invention improves bond reliability, allowing increased yield. A silver plating section (2) is provided between a MOSFET (20) and a GaN-based power element (30), as is a concavity (4) that has a ridge on each edge and blocks solder (22) and a silver paste (32) from spreading. La présente invent...
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| Main Authors | , |
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| Format | Patent |
| Language | English French Japanese |
| Published |
04.06.2015
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| Subjects | |
| Online Access | Get full text |
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| Abstract | This invention improves bond reliability, allowing increased yield. A silver plating section (2) is provided between a MOSFET (20) and a GaN-based power element (30), as is a concavity (4) that has a ridge on each edge and blocks solder (22) and a silver paste (32) from spreading.
La présente invention améliore la fiabilité des liaisons, ce qui permet un rendement accru. Une section d'argenture (2) est prévue entre un MOSFET (20) et un élément de puissance (30) à base de GaN, ainsi qu'une concavité (4) qui a une arête sur chaque bord qui retient la soudure (22) et une pâte d'argent (32) pour les empêcher de se répandre.
接合信頼性を向上させ、歩留まりの良化を可能とする。ＭＯＳＦＥＴ（２０）とＧａＮ系パワーデバイス（３０）との間の銀メッキ部（２）に設けられており、ハンダ（２２）および銀ペースト（３２）の拡がりを妨げる両端が隆起した窪み（４）を備えている。 |
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| AbstractList | This invention improves bond reliability, allowing increased yield. A silver plating section (2) is provided between a MOSFET (20) and a GaN-based power element (30), as is a concavity (4) that has a ridge on each edge and blocks solder (22) and a silver paste (32) from spreading.
La présente invention améliore la fiabilité des liaisons, ce qui permet un rendement accru. Une section d'argenture (2) est prévue entre un MOSFET (20) et un élément de puissance (30) à base de GaN, ainsi qu'une concavité (4) qui a une arête sur chaque bord qui retient la soudure (22) et une pâte d'argent (32) pour les empêcher de se répandre.
接合信頼性を向上させ、歩留まりの良化を可能とする。ＭＯＳＦＥＴ（２０）とＧａＮ系パワーデバイス（３０）との間の銀メッキ部（２）に設けられており、ハンダ（２２）および銀ペースト（３２）の拡がりを妨げる両端が隆起した窪み（４）を備えている。 |
| Author | NAKANISHI, HIROYUKI SATOH, TOMOTOSHI |
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| DocumentTitleAlternate | 半導体装置 DISPOSITIF À SEMI-CONDUCTEURS |
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| Notes | Application Number: WO2014JP78097 |
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| Snippet | This invention improves bond reliability, allowing increased yield. A silver plating section (2) is provided between a MOSFET (20) and a GaN-based power... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE |
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