SEMICONDUCTOR DEVICE

This invention improves bond reliability, allowing increased yield. A silver plating section (2) is provided between a MOSFET (20) and a GaN-based power element (30), as is a concavity (4) that has a ridge on each edge and blocks solder (22) and a silver paste (32) from spreading. La présente invent...

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Bibliographic Details
Main Authors NAKANISHI, HIROYUKI, SATOH, TOMOTOSHI
Format Patent
LanguageEnglish
French
Japanese
Published 04.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This invention improves bond reliability, allowing increased yield. A silver plating section (2) is provided between a MOSFET (20) and a GaN-based power element (30), as is a concavity (4) that has a ridge on each edge and blocks solder (22) and a silver paste (32) from spreading. La présente invention améliore la fiabilité des liaisons, ce qui permet un rendement accru. Une section d'argenture (2) est prévue entre un MOSFET (20) et un élément de puissance (30) à base de GaN, ainsi qu'une concavité (4) qui a une arête sur chaque bord qui retient la soudure (22) et une pâte d'argent (32) pour les empêcher de se répandre. 　接合信頼性を向上させ、歩留まりの良化を可能とする。ＭＯＳＦＥＴ（２０）とＧａＮ系パワーデバイス（３０）との間の銀メッキ部（２）に設けられており、ハンダ（２２）および銀ペースト（３２）の拡がりを妨げる両端が隆起した窪み（４）を備えている。
Bibliography:Application Number: WO2014JP78097