REACTION INDUCING UNIT, SUBSTRATE TREATING APPARATUS, AND THIN-FILM DEPOSITION METHOD

• Main Authors: KO, JAE GUK, RA, JONG HOON, BANG, HONG JOO, SHIN, DONG HWA, KIM, KWANG SOO, BAEK, SUNG GYU, KIM, SEUL KI, CHOI, JANG WON, KIM, MIN SEOK
• Format: Patent
• Language: English; French; Korean
• Published: 21.05.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention provides a substrate treating apparatus. The substrate treating apparatus of the present invention comprises: a process chamber; a substrate susceptor that is installed in the process chamber and connected to a rotating shaft to rotate and has a plurality of substrates placed on the same plane thereof; a heater member placed on the bottom surface of the substrate susceptor; and reaction inducing units for spraying gas onto treated surfaces of the substrates from the locations corresponding to the plurality of substrates placed on the substrate susceptor, wherein the reaction inducing units have a fluid channel with a multi-layer composite structure with at least three or more stacked plates. La présente invention concerne un appareil de traitement de substrat. L'appareil de traitement de substrat selon la présente invention comprend : une chambre de traitement ; un suscepteur à substrats qui est installé dans la chambre de traitement et raccordé à un arbre rotatif pour tourner et sur le même plan duquel est placée une pluralité de substrats ; une chambre de chauffage placée sur la surface inférieure du suscepteur à substrats ; et une unité d'entraînement de réaction pour pulvériser un gaz sur des surfaces traitées des substrats à partir d'emplacements qui correspondent à la pluralité de substrats placés sur le suscepteur à substrats, les unités d'entraînement de réaction comportant un canal à fluide qui présente une structure composite multicouche à au moins trois, ou plus, plaques empilées. 본 발명은 기판 처리 장치를 제공한다. 본 발명의 기판 처리 장치는 공정 챔버; 상기 공정 챔버에 설치되고 동일 평면상에 복수의 기판이 놓여지며, 회전축에 연결되어 회전되는 기판 서셉터; 상기 기판 서셉터 저면에 위치되는 히터 부재; 및 상기 기판 서셉터에 놓여진 복수의 기판들 각각에 대응하는 위치에서 기판의 처리면으로 가스를 분사하는 반응 유도 유닛들을 포함하되; 상기 반응 유도 유닛은 적어도 3개 이상이 적층된 플레이트들에 의해 다층 복합 구조의 유로를 가질 수 있다.