METHOD FOR PRODUCING SILICON TARGET STRUCTURE AND SILICON TARGET STRUCTURE

• Main Authors: YASUKAWA TAKAMASA, TSUZUKIHASHI KOJI, IKEDA HIROSHI, KANAI MASAHIRO
• Format: Patent
• Language: English; French; Japanese
• Published: 22.01.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In this method for producing a silicon target structure, an Ag film is formed at the join surface of a silicon target, the silicon target is integrated with a copper backing plate by interposing indium solder between the Ag film and the copper backing plate, and the indium solder is heated/melted to join the silicon target to the copper backing plate, thus integrally joining the silicon target to the copper backing plate. L'invention concerne un procédé de fabrication d'une structure de cible de silicium, selon lequel un film d'argent est formé au niveau de la surface de liaison d'une cible de silicium, la cible de silicium est intégrée à une plaque support en cuivre par interposition d'une brasure à l'indium entre le film d'argent et la plaque support en cuivre, et la brasure à l'indium est chauffée/fondue pour assembler la cible de silicium à la plaque support en cuivre, de sorte que la cible de silicium et la plaque support en cuivre s'assemblent en ne formant qu'une seule pièce.