ETCHING METHOD

In the present invention, a substrate to be processed (W) which has a silicon nitride film on the surface, and which has a polysilicon film and/or a silicon oxide film provided adjacent to the silicon nitride film, is disposed within a chamber (40), whereupon, within the chamber (40), an F-containin...

Full description

Saved in:
Bibliographic Details
Main Authors TAKAHASHI NOBUHIRO, MORIYA SHUJI, MATSUMOTO MASASHI, TAKAHASHI TETSURO, MATSUNAGA JUNICHIRO
Format Patent
LanguageEnglish
French
Japanese
Published 23.10.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:In the present invention, a substrate to be processed (W) which has a silicon nitride film on the surface, and which has a polysilicon film and/or a silicon oxide film provided adjacent to the silicon nitride film, is disposed within a chamber (40), whereupon, within the chamber (40), an F-containing gas and O2 gas are supplied in a state in which at least the O2 gas is excited. As a result, the silicon nitride film is selectively etched with respect to the polysilicon film and/or the silicon oxide film. Selon la présente invention, un substrat à traiter (W) qui est doté d'un film de nitrure de silicium sur la surface et d'un film de polysilicium et/ou d'un film d'oxyde de silicium prévus adjacents au film de nitrure de silicium, est disposé à l'intérieur d'une chambre (40), après quoi, à l'intérieur de la chambre (40), un gaz contenant F et un gaz O2 sont fournis dans un état dans lequel au moins le gaz O2 est excité. Par conséquent, le film de nitrure de silicium est gravé de façon sélective par rapport au film de polysilicium et/ou au film d'oxyde de silicium.
Bibliography:Application Number: WO2014JP55614